aug.1998 auxiliary cathode connector (red) 500 ?8 gate (white) f 3.5 depth 2.2 ?0.2 cathode 0.4 min 0.4 min type name anode f 85 ?0.2 f 85 ?0.2 f 120 max 26 ?0.5 f 3.5 depth 2.2 ?0.2 mitsubishi reverse-conducting gto thyristors FGR3000CV-90DA high power inverter use press pack type FGR3000CV-90DA outline drawing dimensions in mm v drm v dsm v d(dc) unit symbol parameter v v v voltage class repetitive peak off-state voltage + non-repetitive peak off-state voltage + dc off-state voltage + maximum ratings 90da 4500 4500 2500 + : v gk = C2v a a a ka a 2 s a a ka a 2 s a/ m s v v a a w kw w w c c kn g v dm = 3375v, t j = 125 c, c s = 3.5 m f, l s = 0.2 m h f = 60hz, sine wave q = 180 , t f = 70 c one half cycle at 60hz one cycle at 60hz f = 60hz, sine wave q = 180 , t f = 70 c one half cycle at 60hz one cycle at 60hz v d = 2250v, i gm = 40a, t j = 125 c recommended value 37 standard value repetitive controllable on-state current rms on-state current average on-state current surge (non-repetitive) on-state current i 2 t for fusing rms reverse current average reverse current surge (non-repetitive) reverse current current-squared, time integration critical rate of rise of on-state current peak forward gate voltage peak reverse gate voltage peak forward gate current peak gate reverse current peak forward gate power dissipation peak reverse gate power dissipation average forward gate power dissipation average reverse gate power dissipation junction temperature storage temperature mounting force required weight i tqrm i t(rms) i t(av) i tsm i t 2 t i r(rms) i r(av) i rsm i r 2 t d it /d t v fgm v rgm i fgm i rgm p fgm p rgm p fg(av) p rg(av) t j t stg symbol parameter conditions ratings 3000 1410 900 18 1.3 10 6 1100 700 22 2.0 10 6 500 10 18 100 900 400 27 100 230 C40 ~ +125 C40 ~ +150 31 ~ 43 1450 unit application inverters, d.c. choppers, induction heaters, d.c. to d.c. converters. l i tqrm repetitive controllable on-state current ...........3000a l i t(av) average on-state current .......................900a l v drm repetitive peak off state voltage ...................4500v l reverse conducting type
aug.1998 10 0 23 10 2 5710 3 23 5710 4 23 5710 5 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 ? v fgm = 10v v gt = 1.5v t j = 25? i gt = 3000ma p fg(av) = 100w p fgm = 400w i fgm = 100a 25 20 15 10 0 5 10 0 23 5710 1 23 5710 2 diode part gto part 0.040 0 23 10 ? 5710 ? 23 5710 ? 23 5710 0 0.020 0.015 0.010 0.005 0.025 0.030 0.035 23 10 0 5710 1 diode part gto part diode part gto part 012345678 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 t j = 125? on-state characteristic (gto part) reverse characteristic (diode part) current (a) voltage (v) maximum on-state and maximum reverse characteristics surge current (ka) conduction time (cycles at 60hz) rated on-state and reverse surge current gate voltage (v) gate current (ma) gate characteristics thermal impedance (?/ w) time (s) maximum thermal impedance characteristics (junction to fin) v tm v rm i drm i rg d v /d t t gt i gqm v gt i gt 4.0 4.0 200 250 10 1.5 3000 0.016 0.025 v v ma ma v/ m s m s a v ma on-state voltage peak reverse voltage drop repetitive peak off-state current reverse gate current critical rate of rise of off-state voltage turn-on time peak gate turn-off current gate trigger voltage gate trigger current t j = 125 c, i tm = 3000a, instantaneous measurment t j = 125 c, i rm = 3000a, instantaneous measurment t j = 125 c, v drm applied, v gk = C2v t j = 125 c, v rg = 17v t j = 125 c, v d = 2250v, v gk = C2v t j = 125 c, i tm = 3000a, i gm = 40a, v d = 2250v gto side (junction to fin) diode side (junction to fin) mitsubishi reverse-conducting gto thyristors FGR3000CV-90DA high power inverter use press pack type electrical characteristics symbol parameter test conditions limits min typ max unit t gq r th(j-f) turn-off time thermal resistance t j = 125 c, i tm = 3000a, v dm = 3375v, d igq /d t = C40a/ m s v rg = 17v, c s = 3.5 m f, l s = 0.2 m h dc method : v d = 24v, r l = 0.1 w , t j = 25 c 30 m s c/w 750 1000 performance curves
aug.1998 3000 2400 1800 1200 600 0 1000 0 200 400 600 800 resistive, inductive load 180? conduction 130 100 90 70 60 50 1000 750 500 250 0 120 80 110 resistive, inductive load 180? conduction 130 110 100 80 60 50 1000 0 70 90 120 200 400 600 800 q 360? resistive, inductive load q = 30? 60? 90? 120? 180? 5000 4000 3000 2000 1000 0 1000 800 0 200 400 600 q = 30? 60? 90? 180? 120? q 360? resistive, inductive load 130 100 90 70 60 50 1500 0 300 600 900 120 1200 80 110 360? resistive, inductive load q q = 30? 60? 90? 180? 120? 270? 5000 4000 3000 2000 1000 0 1500 0 300 600 900 1200 360? resistive, inductive load q q = 30? 60? 90? 270? dc 180? 120? on-state power dissipation (w) average on-state current (a) maximum on-state power dissipation characteristics (gto part, single-phase half wave) fin temperature (?c) average on-state current (a) allowable fin temperature vs. average on-state current (gto part, single-phase half wave) reverse power dissipation (w) average reverse current (a) maximum reverse power dissipation characteristic (diode part, single phase wave) fin temperature (?c) average reverse current (a) allowable fin temperature vs. average reverse current (diode part, single phase half wave) on-state power dissipation (w) average on-state current (a) maximum on-state power dissipation characteristics (gto part, rectangular wave) fin temperature (?c) average on-state current (a) allowable fin temperature vs. average on-state current (gto part, rectangular wave) mitsubishi reverse-conducting gt o thyrist ors fgr3000cv -90da high power inverter use press p ack type dc
aug.1998 8000 5000 4000 2000 1000 0 140 ?0 ?0 20 60 7000 100 3000 6000 v d = 5~20v i t = 25~200a half sine wave 8.0 5.0 4.0 2.0 1.0 0 100 50 10 0 20 30 40 60 70 7.0 80 90 3.0 6.0 t d t gt i t = 3000a v d = 2250v d it /d t = 500a/ m s d ig /d t = 20a/ m s t j = 125? 40 30 25 15 5 0 4000 0 500 1500 2500 3500 10 20 35 1000 2000 3000 t s t gq v d = 2250v v dm = 3375v d igq /d t = ?0a/ m s v rg = 17v c s = 3.5 m f l s = 0.2 m h t j = 125? 800 700 600 500 400 300 3000 500 1000 1500 2000 2500 v d = 2250v v dm = 3375v d igq /d t = ?0a/ m s v rg = 17v c s = 3.5 m f l s = 0.2 m h t j = 125? 900 800 750 650 550 500 60 10 20 30 40 50 600 700 850 v d = 2250v v dm = 3375v i t = 3000a v rg = 17v c s = 3.5 m f l s = 0.2 m h t j = 125? 50 40 30 20 10 0 100 50 10 0 20 30 40 60 70 80 90 v d = 2250v v dm = 3375v i t = 3000a v rg = 17v c s = 3.5 m f l s = 0.2 m h t j = 125? t s t gq gate trigger current (ma) junction temperature (?) gate trigger current vs. junction temperature (typical) turn on time t gt , turn on delay time t d ( m s) turn on gate current (a) turn on time, turn on delay time vs. turn on gate current (typical) turn off time t gq , turn off storage time t s ( m s) rate of rise of turn off gate current (a / m s) turn off time, turn off storage time vs. rate of rise of turn off gate current (typical) turn off time t gq , turn off storage time t s ( m s) turn off current (a) turn off time, turn off storage time vs. turn off gate current (typical) turn off gate current (a) rate of rise of turn off gate current (a / m s) turn off gate current vs. rate of rise of gate current (typical) turn off gate current (a) turn off current (a) turn off gate current vs. turn off current (typical) mitsubishi reverse-conducting gto thyristors FGR3000CV-90DA high power inverter use press pack type
aug.1998 8 5 4 2 1 0 3500 500 1100 1700 2300 7 2900 3 6 v rm = 2250v c s = 3.5 m f t j = 125? d i /d t = 300a/ m s 100a/ m s 3.0 2.5 2.0 1.5 1.0 0.5 3500 500 1100 1700 2300 2900 d it /d t = 300a/ m s 200a/ m s 100a/ m s v d = 2250v i gm = 40a d ig /d t = 10a/ m s c s = 3.5 m f r s = 5 w t j = 125? 10 1 20 40 60 80 100 120 0 140 10 3 3 2 10 2 7 5 3 2 7 5 3 3 2 7 5 q dr t dr i rm = 1500a d i /d t = 100a/ m s t j = 125? av. max. av. max. 10 1 23 10 1 5710 2 23 5710 3 23 5710 4 10 3 3 2 10 2 7 5 5 3 2 7 5 3 2 7 5 q dr d i /d t = 100a/ m s t j = 125? av. max. av. max. t dr 16 8 4 2 0 3000 500 1000 1500 2000 2500 12 14 6 10 v d = 2250v v dm = 3375v d igq /d t = ?0a/ m s v rg = 17v l s = 0.2 m h t j = 125? c s = 2.0 m f 3.5 m f 10 1 23 10 0 5710 1 23 5710 2 23 5710 3 10 3 3 2 10 2 7 5 5 3 2 7 5 3 2 7 5 q dr t dr i rm = 1500a t j = 125? av. max. av. max. switching energy eon (j/p) on state current (a) turn on switching energy (maximum) switching energy eoff (j/p) turn off current (a) turn off switching energy (maximum) off state recovery loss(diode part) (j/p) reverse current (a) off state recovery loss(diode part) vs. reverse current (typical) off state recovery charge ( m c) off state recovery time ( m s) junction temperature (?) off state recovery charge, off state recovery time vs. junction temperature off state recovery charge ( m c) off state recovery time ( m s) reverse current (a) off state recovery charge, off state recovery time vs. reverse current off state recovery charge ( m c) off state recovery time ( m s) rate of decrease of reverse current (a / m s) off state recovery charge, off state recovery time vs. rate of decrease of reverse current mitsubishi reverse-conducting gto thyristors FGR3000CV-90DA high power inverter use press pack type
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